Philips bfs505 cnv free download

File name bfs505_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 FEATURES PINNING Low current consumption PIN DESCRIPTION handbook, 2 columns 3 High power gain Code: N0 Low noise figure 1 base High transition frequency 2 emitter Gold metallization ensures 3 collector 1 2 excellent reliability Top view MBC870 SOT323 envelope. Fig.1 SOT323. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V IC DC collector current 18 mA Ptot total power dissipation up to Ts = 147 C; note 1 150 mW hFE DC current gain IC = 5 mA; VCE = 6 V; Tj = 25 C 60 120 250 fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; 9 GHz Tamb = 25 C GUM maximum unilateral power gain Ic = 5 mA; VCE = 6 V; f = 900 MHz; 17 dB Tamb = 25 C F noise figure Ic = 1.25 mA; VCE = 6 V; 1.2 1.7 dB f = 900 MHz; Tamb = 25 C Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995